The most exciting here, resides in Gallium Nitride (GaN) that is capturing momentous market share of RF high-power semiconductors, especially in wireless infrastructure.
The technology bridges the gap between two older technologies,
exhibiting the high-frequency performance of Gallium Arsenide and power
handling capabilities of Silicon LDMOS.
According to findings from ABI Research’s RF Power Semiconductors, from the overall market that recorded over $1.5 billion in 2015; spending on RF high-power semiconductors
for the wireless infrastructure markets flattened out this year, despite
the fact that the overall market hit well over $1.5 billion in 2015.
One can also observe that, defense-oriented market segments show the
strongest performance; so that many experts in the industry believe these
defense-oriented segments will drive the momentum.